2121非凡

CN EN
Home
About Us
Newpros
New N150V SGT MOSFETs
New N150V SGT MOSFETs Back
 PDF

Introduction Power over Ethernet Protocol (PoE) has been available for many years. A new standard IEEE 802.3bt was approved in 2018, which increases the maximum power that can be transmitted through twisted-pair Ethernet cables and encourages new PoE applications to pursue higher power density.Current power supply equipment (PSE) provides up to 100W of power and supports 8 different power levels;Power Device (PD) will be able to use up to 71W of power.Yangjie launched N150V serialized products for IEEE802.3af&at&bt.Using SGT technology, it has higher switching speeds and lower losses than traditional Trench MOS products.
Features 1、Using SGT technology, the product has low internal resistance and excellent switching characteristics
2、PDFN5060, SO-8, TO252, ITO220AB multiple packages are optional
3、Applicable to IEEE802.3af&at&bt protocol PD power supply
SPECIFICATION

YJD18G15A YJG15G15A YJG60G15HJ YJS05G15A

Related new products

DFN1608 Package ESD Protection Device

MOSFET for High Power DC-DC

New SiC MOSFET for Photovoltaic Energy Storage, OBC&Power Supply

N60V SGT MOSFET

TO-252 Package Power Transistor for Motor Driver & High Power Frequency Converter

120V SGT process N-channel MOSFET

Optimization Design of Rectifier Bridge —— New Package GBU-L

Automotive IGBT for 800V Voltage Platform PTC Heater of New Energy Vehicles

Low Power SCR for Small Appliances

Micro-pattern trenches IGBT for Servo controller/frequency converter/industrial power supply
网站地图